IRF7495 Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

100
10
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
5.0V
4.5V
100
10
IRF7495
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
5.0V
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
1
0.1
2
VDS = 50V
20µs PULSE WIDTH
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5
ID = 7.3A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3