IRF7379IPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET® Power MOSFET

N-Channel
IRF7379IPbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
10
4.5V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
100
10
T_J = 150°C _{TJ = 25°C}
1
V_DS = 15V
10
20µs PULSE WIDTH
A
4
5
6
7
8
9
10
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.1
0.0
VGS = 0V _A
0.5
1.0
1.5
2.0
2.5
V_SD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3