IRF6795MPBF_10 Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET plus Schottky Diode

IRF6795MTRPbF
Absolute Maximum Ratings
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
T_P
T_J
T_STG
e Power Dissipation
e Power Dissipation
f Power Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Parameter
el Junction-to-Ambient
jl Junction-to-Ambient
kl Junction-to-Ambient
fl Junction-to-Case
Junction-to-PCB Mounted
eà Linear Derating Factor
100
Max.
2.8
1.8
75
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.66
–––
Units
W
°C
Units
°C/W
W/°C
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
1E-006
1E-005
Ri (°C/W) τi (sec)
1.64e-02 1.01e-06
2.21e-02 6.00e-06
τJ
τJ
τ1
τ1
R1
R1
R2
R2
R3
R3
τ2
τ3
τ2
τ3
R4
R4
R5
R5
R6
R6
R7
R7
τ4
τ4
τ5
τ5
τ6
τ6
τ7
τ7
R8
R8
τA
τA
2.30e-01
8.64e-01
1.66e+00
8.20e-05
1.56e-03
3.96e-03
Ci= τi/Ri
Ci= τi/Ri
4.90e-01 6.48e-03
2.37e+01 1.03e+00
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1.80e+01 3.98e+01
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
Notes:
(At lower pulse widths Zth_JA & Zth_JC are combined)
ˆ Used double sided cooling , mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
Š R_θ is measured at T_J of approximately 90°C.
back and with small clip heatsink.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3