IRF6674PBF Datasheet, PDF (3/9 Pages) International Rectifier – DirectFETPower MOSFET

Absolute Maximum Ratings
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
e Power Dissipation
e Power Dissipation
f Power Dissipation
Parameter
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJC
R_θJ-PCB
Parameter
el Junction-to-Ambient
jl Junction-to-Ambient
kl Junction-to-Ambient
fl Junction-to-Case
Junction-to-PCB Mounted
10
IRF6674TRPbF
Max.
3.6
2.3
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
35
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τJ
τJ
τ1
τ1
R1
R₁
Ci= τi/Ri
Ci i/Ri
R2
R₂
τ2 _τ2
0.001
R3
R4
Ri (°C/W) τι (sec)
R₃
R4
τC ^{0.023002 0.000008}
τ3 _τ3
τ4 ^{τ 0.269754 0.000072}
τ4 _{0.770575 0.001409}
0.337715 0.005778
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case 
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„ T_C measured with thermocouple incontact with top (Drain) of part. ^{back and with small clip heatsink.}
ˆ Used double sided cooling, mounting pad with large heatsink.
Š R_θ is measured at T_J of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
3