IRF6621 Datasheet, PDF (3/9 Pages) International Rectifier – The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance

IRF6621
Absolute Maximum Ratings
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
™ Power Dissipation
™ Power Dissipation
f Power Dissipation
Parameter
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
™g Junction-to-Ambient
R_θJA
dg Junction-to-Ambient
R_θJA
eg Junction-to-Ambient
R_θJC
fg Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
™Ã Linear Derating Factor
100
Max.
2.2
1.4
42
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
W
°C
Units
°C/W
W/°C
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R_1R1
R_2R2
R_3R3
R_4R4
R_5R5
Ri (°C/W) τi (sec)
τ_{J τJ}
τ_{CAτ 1.6195 0.000126}
τ_{1 τ1}
τ_{2 τ2}
τ_{3 τ3}
τ_{4 τ4}
τ_{5 τ5}
2.1406 0.001354
Ci= τi/Ri
22.2887 0.375850
Ci= τi/Ri
20.0457 7.410000
11.9144 99
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
 Surface mounted on 1 in. square Cu board, steady state.
‚ Used double sided cooling , mounting pad.
ƒ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
„ T_C measured with thermocouple incontact with top (Drain) of part.
… R_θ is measured at T_J of approximately 90°C.
 Surface mounted on 1 in. square Cu (still ^{ƒ Mounted to a PCB with}
air).
small clip heatsink (still air)
www.irf.com
ƒ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3