IRF3710PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF3710PbF
1000
100
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
1000
100
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
10
1
0.1
0.1
3.5V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
10
1
0.1
0.1
3.5V
20µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.10
3.0
VDS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0
I_D = 57A
2.5
2.0
1.5
1.0
0.5
V _GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature
( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3