IRF3415PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF3415PbF
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.05V
BOTTOM 4.5V
100
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.05V
BOTTOM 4.5V
100
4.5V
10
1
20us PULSE WIDTH
TJ = 25 ^oC
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
20us PULSE WIDTH
TJ = 175 ^oC
10
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
T_J = 25°C
100
T_J = 175°C
V _DS= 50V
20µs PULSE WIDTH
10
4
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0 _{ID = 37A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature ( ^oC)
Fig 4. Normalized On-Resistance
Vs. Temperature