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IRF2907ZS-7PPBF_06 Datasheet, PDF (3/11 Pages) International Rectifier – HEXFET® Power MOSFET
IRF2907ZS-7PPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
1000
100
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
10
TJ = 175°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
12345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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200
TJ = 25°C
150
TJ = 175°C
100
50
0
0
VDS = 10V
380µs PULSE WIDTH
25 50 75 100 125 150
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3