IRC4BC40F Datasheet, PDF (3/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC40F
60
50
40
S q u are wave:
30
60 % of rated
vo lta g e
20
I
F or both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
Power D issipation = 28W
Trian gu lar w a ve :
I
C lam p voltage:
80 % o f ra ted
10
Ideal diodes
0
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I_RMS of fundamental; for triangular wave, I=I_PK)
1000
1000
T_J = 25°C
100
TJ = 15 0°C
10
100
T_J = 150°C
T_J = 25°C
10
V_GE = 15V
1
20µs PU LSE W ID TH _A
1
10
V_CE , Collec tor-to-Em itter V oltage (V )
Fig. 2 - Typical Output Characteristics
V _CC = 50V
1
5µs PULSE WIDTH _A
5
6
7
8
9
10
11
12
V_{G E}, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
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