IR51HD310 Datasheet, PDF (3/6 Pages) International Rectifier – SELF-OSCILLATING HALF-BRIDGE

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IR51HD310
Dynamic Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Symbol
Parameter
Definition
trr
Reverse Recovery Time (MOSFET Body Diode)
Qrr Reverse Recovery Charge (MOSFET Body Diode)
DT Deadtime, LS Turn-Off to HS Turn-On &
HS Turn-Off to LS Turn-On
D
RT Duty Cycle
TA = 25ºC
Min. Typ. Max. Units
--- 240 --- ns
--- 0.85 --- µC
--- 1.2 --- µs
--- 50 --- %
Test Conditions
I_F = 700mA
di/dt = 100A/µs
fOSC = 20 kHz
Static Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Symbol
Parameter
Definition
Supply Characteristics
VCCUV+ VCC Supply Undervoltage Positive Going
Threshold
VCCUV- VCC Supply Undervoltage Negative Going
Threshold
IQCC
Quiescent VCC Supply Current
VCLAMP VCC Zener Shunt Clamp Voltage
Floating Supply Characteristics
IQBS
Quiescent VBS Supply Current
IOS
Offset Supply Leakage Current--- ---
Oscillator I/O Characteristics
fOSC
Oscillator Frequency
ICT
VCTUV
VRT+
CT Input Current
CT Undervoltage Lockout
---
RT High Level Output Voltage, VCC - RT
VRT-
RT Low Level Output Voltage
VRTUV RT Undervoltage Lockout, VCC - RT
VCT+ 2/3 VCC Threshold
VCT-
1/3 VCC Threshold
Output Characteristics
RDS(on) Static Drain-to-Source On-Resistance
V_SD
Diode Forward Voltage
--- 0.8
TA = 25ºC
Min. Typ. Max. Units Test Conditions
--- 8.4 ---
V
--- 8.0 ---
--- 300 --- µA
--- 15.6 --- V
ICC = 5 mA
--- 30 --- µA
50
V
B = VIN = 400V
--- 20 ---
kHz
--- 100 ---
--- 0.001 1.0 µA
100 ---
2.5V < V
--- 20 ---
--- 200 --- mV
--- 20 ---
--- 200 ---
--- 100 ---
--- 8.0 --- V
--- 4.0 ---
RT = 35.7 kΩ,
CT = 1 nF
RT = 7.04 kΩ,
CT = 1 nF
CC < VCCUV+
IRT = -100 µA
IRT = -1 mA
IRT = 100 µA
IRT = 1 mA
2.5V < VCC < VCCUV+
--- 3.6 --- Ω
---
V
ID = 700 mA
Tj = 150 ºC
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