IR3519 Datasheet, PDF (3/10 Pages) International Rectifier – Synchronous MOSFET GateDriver IC

IR3519
PARAMETER
TEST CONDITION
MIN
LGATE low to UGATE high BOOT = VDD = 7V, PH =0V GND
5
delay
= 0V, measure time from LGATE
falling to 1V to UGATE rising to
1V.
UGATE low to LGATE high BOOT = VDD = 7V, PH =0V GND
5
delay
= 0V, measure time from UGATE
falling to 1V to LGATE rising to
1V.
Minimum Pulse Width
Note 1
Passive Gate Pull-Down
Resistance
PH Bias Current
Measure with PWM=Tri-state,
PH=1V
VDD Under Voltage Lockout Comparator (V_UVLO)
Start Threshold
Stop Threshold
Hysteresis
Start – Stop
PWM Input
UGATE Threshold Voltage,
V_{UGATE TH}
UGATE Threshold Voltage,
V_{UGATE TH}
UGATE Threshold
Hysteresis
PWM rising
PWM falling
LGATE Threshold Voltage,
V_{LGATE TH}
LGATE Threshold Voltage,
V_{LGATE TH}
LGATE Threshold Hysteresis
PWM falling
PWM rising
Tri-State Bias voltage,
V_{PWM TRI}
Input Bias Current
V(PWM) = 0V
V(PWM) = 3.3V
V(PWM) = 5V
Tri-State Time Constant
C_PWM = 20pF, Measure time from
V(PWM) = 0V release to LGATE
< 1V. Note 1
C_PWM = 20pF, Measure time from
V(PWM) = 3.3V release to
HGATE < 1V. Note 1
C_PWM = 20pF, Measure time from
V(PWM) = 5V release to HGATE
< 1V. Note 1
5.65
5.4
2.0
1.9
30
0.6
0.74
30
1.2
-260
140
370
TYP MAX UNIT
15
ns
15
ns
30
50
ns
20
kΩ
-2
-10
μA
6.0
6.3
V
5.7
6.1
V
0.4
V
2.2
2.4
V
2.1
2.3
V
90
170
mV
0.8
1.0
V
0.9
1.1
V
90
170
mV
1.6
1.8
V
-210 -160
μA
200
270
μA
460
570
μA
190
ns
270
ns
380
ns
Page 3 of 10
www.irf.com
8/15/08