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| G150SPBK06P3H Datasheet, PDF (3/5 Pages) International Rectifier – HiRelTM INT-A-Pak 3, PLASTIC | |||
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G150SPBK06P3H
Static Characteristics
Module
Symbol
Parameter
RI Insulation Resistance
Test Conditions
Min Typ Max Units
From all Pins to Case, V = 500VDC 10
-
-
Mâ¦
IGBT
Symbol
Parameter
ICES
IGES
VGE(th)
Collector Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
VCE(sat) Collector-Emitter Saturation Voltage
Test Conditions
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 15mA, VCE = 10V
IC = 150A, VGE = 15V
IC = 75A, VGE = 15V
Min Typ Max Units
-
-
1.0 mA
-
-
10
µA
4.0 5.4 8.1
-
2.3 2.6
V
-
1.8 2.1
Diode
Symbol
Parameter
VFM Diode Forward Voltage
Test Conditions
Min Typ Max Units
Bridge Diodes, IE = 150A, VGE = 0V -
Regen Diodes, IE = 50A, VGE = 0V
-
1.8 2.1
V
-
2.4
SCR
Symbol
Parameter
IRRM Max. Peak Reverse Leakage Current
IDRM Max. Peak Off-state Leakage Current
VTM Forward On-state Voltage
IH Holding Current
Test Conditions
VRRM = 600V
VDRM = 600V
IF = 100A
IF = 50A
DC Method, Bias Condition C
Min Typ Max Units
-
-
15
mA
-
-
15
-
-
1.35
V
-
-
1.15
-
200 300 mA
Dynamic Characteristics
IGBT
Symbol
Parameter
QG
td(on)
tr
td(off)
tf
Total Gate Charge
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Test Conditions
Min
VCC = 300V, IC = 150A, VGE = 15V -
VCC = 300V, IC = 150A
-
VGE1 = VGE2 = 15V
-
RG = 20â¦, Turn-on
-
RG = 10â¦, Turn-off
-
Typ
-
-
-
-
-
Max
1600
1200
850
2.1
300
Units
nC
ns
ns
µs
ns
Diode
Symbol
Parameter
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
www.irf.com
Test Conditions
IE = 150A, di/dt = 300A/µs Min
Bridge Diodes only
Min Typ Max Units
-
-
170 ns
-
-
9.0 µC
3
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