CPV362M4U Datasheet, PDF (3/10 Pages) International Rectifier – UltraFast IGBT IGBT SIP MODULE

CPV362M4U
8
2.34
Tc = 90°C
7
Tj = 125°C
P ow er Fac tor = 0.8
2.05
M odulation D epth = 1.15
6
V cc = 50 % o f R a ted V o lta g e ^1.76
5
1.46
4
1.17
3
0.88
2
0.59
1
0.29
0
0.00
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
100
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.1
V GE = 15V
20µs PULSE WIDTH A
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
10
TJ = 150°C
TJ = 25°C
1
V_CC = 10V
0.1
5µs PULSE WIDTH _A
4
6
8
10
V_{G E} , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics