AUIRFN8458 Datasheet, PDF (3/10 Pages) International Rectifier – Advanced Process Technology

1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.15V
4.8V
1
4.8V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
1.0
3 4 5 6 7 8 9 10 11 12
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
AUIRFN8458
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.15V
4.8V
10
4.8V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
2.0
ID = 43A
1.8 ^{VGS = 10V}
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs. Temperature
14.0
ID= 26A
12.0
VDS= 32V
10.0
VDS= 20V
VDS= 8.0V
8.0
6.0
4.0
2.0
0.0
0
5
10 15 20 25 30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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October 17, 2014