80RIA Datasheet, PDF (3/8 Pages) International Rectifier – PHASE CONTROL THYRISTORS Stud Version

Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
t_d
Typical delay time
t_q
Typical turn-off time
80RIA Series
Bulletin I25201 rev. B 03/03
80RIA
300
1
110
Units Conditions
A/µs
T_J = 125°C, V_d = rated V_DRM, I_TM = 2xdi/dt snubber
0.2µF, 15Ω, Gate pulse: 20V, 65Ω, t_p = 6µs, t_r= 0.5µs
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15Ω source, t_p = 6µs, t_r = 0.1µs,
µs ^{Vd = rated VDRM, ITM = 50Adc, TJ = 25°C.}
I_TM = 50A, T_J = T_J max, di/dt = -5A/µs min., V_R = 50V,
dv/dt = 20V/µs, Gate bias: 0V 25Ω, t_p = 500µs
Blocking
Parameter
dv/dt Maximum critical rate of rise of
off-state voltage
I_RRM Max. peak reverse and off-state
I_DRM leakage current
80RIA
500
15
Units Conditions
V/µs T_J = 125°C exponential to 67% rated V_DRM
mA T_J = 125°C rated V_DRM/V_RRM applied
Triggering
Parameter
P_GM
P_G(AV)
I_GM
+V_GM
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
-V_GM Maximum peak negative
gate voltage
I_GT
Max. DC gate current required
to trigger
V_GT Max. DC gate voltage required
to trigger
I_GD DC gate current not to trigger
V_GD DC gate voltage not to trigger
80RIA
12
3
3
20
10
270
120
60
3.5
2.5
1.5
6
0.25
Units Conditions
W
T_J = T_J max, t_p ≤ 5ms
T_J = T_J max, f = 50Hz, d% = 50
A T_J = T_J max, t_p ≤ 5ms
V
T_J = T_J max, t_p ≤ 5ms
T_J = - 40°C
mA T_J = 25°C
T_J = 125°C
T_J = - 40°C
V T_J = 25°C
T_J = 125°C
mA
T_J = T_J max
V
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 6V an-
ode-to-cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V_DRM anode-to-cathode applied
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