|
SI4435DYPBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Simple Drive Requirements | |||
|
◁ |
Si4435DYPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-30 âââ âââ
âââ -0.019 âââ
âââ 0.015 0.020
âââ 0.026 0.035
-1.0 âââ âââ
âââ 11 âââ
âââ âââ -10
âââ âââ -10
âââ âââ -100
âââ âââ 100
âââ 40 60
âââ 7.1 âââ
âââ 8.0 âââ
âââ 16 24
âââ 76 110
âââ 130 200
âââ 90 140
âââ 2320 âââ
âââ 390 âââ
âââ 270 âââ
V
V/°C
â¦
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -8.0A Â
VGS = -4.5V, ID = -5.0A Â
VDS = VGS, ID = -250µA
VDS = -15V, ID = -8.0A
VDS = -24V, VGS = 0V
VDS = -15V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -4.6A
VDS = -15V
VGS = -10V Â
VDD = -15V, VGS = -10V Â
ID = -1.0A
RG = 6.0â¦
RD = 15â¦
VGS = 0V
VDS = -15V
Æ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ -2.5
showing the
A
integral reverse
G
ÂÂÂ ÂÂÂ -50
p-n junction diode.
S
âââ âââ -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V Â
âââ 34 51
âââ 33 50
ns TJ = 25°C, IF = -2.5A
nC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 Surface mounted on FR-4 board, t ⤠5sec.
2
www.irf.com
|
▷ |