SI4410DYPBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Simple Drive Requirements

Si4410DYPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V V_GS = 0V, I_D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, I_D = 1mA
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.010 0.0135
––– 0.015 0.020 ^Ω
V_GS = 10V, I_D = 10A ‚
V_GS = 4.5V, I_D = 5.0A ‚
V_GS(th)
Gate Threshold Voltage
1.0 ––– ––– V V_DS = V_GS, I_D = 250µA
g_fs
Forward Transconductance
––– 35 ––– S V_DS = 15V, I_D = 10A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
V_DS = 30V, V_GS = 0V
V_DS = 30V, V_GS = 0V, T_J = 55°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA V_GS = -20V
––– ––– 100
V_GS = 20V
Q_g
Total Gate Charge
––– 30 45
I_D = 10A
Q_gs
Gate-to-Source Charge
––– 5.4 ––– nC V_DS = 15V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 6.5 –––
V_GS = 10V, See Fig. 10 ‚
t_d(on)
Turn-On Delay Time
––– 11 –––
V_DD = 25V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 7.7 ––– _ns I_D = 1.0A
––– 38 –––
R_G = 6.0Ω
t_f
Fall Time
––– 44 –––
R_D = 25Ω, ‚
C_iss
Input Capacitance
––– 1585 –––
V_GS = 0V
C_oss
Output Capacitance
––– 739 ––– pF V_DS = 15V
C_rss
Reverse Transfer Capacitance
––– 106 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Diode Conduction)ƒ
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.3
showing the
A _{integral reverse}
G
––– ––– 50
p-n junction diode.
S
––– 0.7 1.1 V T_J = 25°C, I_S = 2.3A, V_GS = 0V ‚
––– 50 80 ns T_J = 25°C, I_F = 2.3A
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ When mounted on FR4 Board, t ≤10 sec
„ Starting T_J = 25°C, L = 8.0mH
R_G = 25Ω, I_AS = 10A. (See Figure 15)
… I_SD ≤2.3A, di/dt ≤ 130A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
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