RGBC40M Datasheet, PDF (2/2 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

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IRGBC40M
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)CES
V_(BR)ECS
∆V(BR)CES/∆TJ
V_CE(on)
V_GE(th)
∆V_GE(th)/∆T_J
g_fe
I_CES
I_GES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
20
—
—
—
—
3.0
—
9.2
—
—
—
Typ. Max. Units
—— V
—— V
0.70 — V/°C
2.0 3.0
2.6 — V
2.4 —
— 5.5
-12 — mV/°C
12 — S
— 250 µA
— 1000
— ±100 nA
Conditions
V_GE = 0V, I_C = 250µA
V_GE = 0V, I_C = 1.0A
V_GE = 0V, I_C = 1.0mA
I_C = 24A
V_GE = 15V
I_C = 40A
I_C = 24A, T_J = 150°C
V_CE = V_GE, I_C = 250µA
V_CE = V_GE, I_C = 250µA
V_CE = 100V, I_C = 24A
V_GE = 0V, V_CE = 600V
V_GE = 0V, V_CE = 600V, T_J = 150°C
V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_sc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Notes:
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Repetitive rating; V_GE=20V, pulse width
limited by max. junction temperature.
V_CC=80%(V_CES), V_GE=20V, L=10µH,
R_G= 10Ω
Min. Typ. Max. Units
Conditions
— 59 80
I_C = 24A
— 8.6 10
— 25 42
nC V_CC = 400V
V_GE = 15V
— 26 —
— 37 —
— 240 410
— 230 420
T_J = 25°C
ns I_C = 24A, V_CC = 480V
V_GE = 15V, R_G = 10Ω
Energy losses include "tail"
— 0.75 —
— 1.65 — mJ
— 2.4 3.6
10 — —
— 28 —
µs V_CC = 360V, T_J = 125°C
V_GE = 15V, R_G = 10Ω, V_CPK < 500V
T_J = 150°C,
— 37 —
— 380 —
ns I_C = 24A, V_CC = 480V
V_GE = 15V, R_G = 10Ω
— 460 —
Energy losses include "tail"
— 4.5 — mJ
— 7.5 — nH Measured 5mm from package
— 1500 —
V_GE = 0V
— 190 —
— 20 —
pF V_CC = 30V
ƒ = 1.0MHz
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
Refer to Section D for the following:
Package Outline 1 - JEDEC Outline TO-220AB
C-314
Section D - page D-12
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