OM6001ST_15 Datasheet, PDF (2/4 Pages) International Rectifier – Isolated Hermetic Metal Package

ELECTRICAL CHARACTERISTICS: (T_C = 25°C unless otherwise noted)
STATIC P/N OM6101ST / OM6001ST (100V)
Parameter
Min. Typ. Max. Units Test Conditions
BV_DSS Drain-Source Breakdown
100
Voltage
V ^{VGS = 0,}
I_D = 250 mA
V_GS(th) Gate-Threshold Voltage
2.0
4.0 V V_DS = V_GS, I_D = 250 mA
I_GSS Gate-Body Leakage (OM6101)
± 500 nA V_GS = ± 12.8 V
I_GSS Gate-Body Leakage (OM6001)
± 100 nA V_GS = ± 20 V
I_DSS Zero Gate Voltage Drain
0.1 0.25 mA V_DS = Max. Rat., V_GS = 0
Current
0.2 1.0 mA ^{VDS = 0.8 Max. Rat., VGS = 0,}
T_C = 125° C
I_D(on) On-State Drain Current¹
14
A V_DS 2 V_DS(on), V_GS = 10 V
V_DS(on) Static Drain-Source On-State
Voltage¹
1.2 1.60 V V_GS = 10 V, I_D = 8 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.20
V_GS = 10 V, I_D = 8 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.40
V_GS = 10 V, I_D = 8 A,
T_C = 125 C
ELECTRICAL CHARACTERISTICS: (T_C = 25°C unless otherwise noted)
STATIC P/N OM6102ST / OM6002 ST (200V)
Parameter
Min. Typ. Max. Units Test Conditions
BV_DSS Drain-Source Breakdown
Voltage
V_GS(th)
I_GSS
I_GSS
I_DSS
Gate-Threshold Voltage
Gate-Body Leakage (OM6102)
Gate-Body Leakage (OM6002)
Zero Gate Voltage Drain
Current
I_D(on)
V_DS(on)
On-State Drain Current¹
Static Drain-Source On-State
Voltage¹
200
V ^{VGS = 0,}
I_D = 250 mA
2.0
4.0 V V_DS = V_GS, I_D = 250 mA
± 500 nA V_GS = ± 12.8 V
± 100 nA V_GS = ± 20 V
0.1 0.25 mA V_DS = Max. Rat., V_GS = 0
0.2 1.0 mA ^{VDS = 0.8 Max. Rat., VGS = 0,}
T_C = 125° C
9.0
A V_DS 2 V_DS(on), V_GS = 10 V
1.25 2.2 V V_GS = 10 V, I_D = 5.0 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.44
V_GS = 10 V, I_D = 5.0 A
R_DS(on) Static Drain-Source On-State
Resistance¹
0.88
V_GS = 10 V, I_D = 5.0 A,
T_C = 125 C
DYNAMIC
g_fs
Forward Transductance¹
4.0
C_iss Input Capacitance
750
C_oss Output Capacitance
250
C_rss Reverse Transfer Capacitance
100
t_d(on) Turn-On Delay Time
15
t_r
Rise Time
35
t_d(off) Turn-Off Delay Time
38
t_f
Fall Time
23
S(W )
pF
pF
pF
V_DS 2 V_DS(on), I_D = 8 A
V_GS = 0
V_DS = 25 V
f = 1 MHz
ns V_DD = 30 V, I_D @ 8 A
ns R_g = 7.5 W , V_DS = 10 V
ns
ns
DYNAMIC
g_fs
Forward Transductance¹
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(on) Turn-On Delay Time
t_r
Rise Time
t_d(off) Turn-Off Delay Time
t_f
Fall Time
3.0 5.8
780
150
55
9
18
45
27
S(W )
pF
pF
pF
V_DS 2 V_DS(on), I_D = 5.0 A
V_GS = 0
V_DS = 25 V
f = 1 MHz
ns V_DD = 75V, I_D @ 5.0 A
ns R_g = 7.5 W , V_GS =10 V
ns
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I_S
Continuous Source Current
(Body Diode)
I_SM
Source Current¹
(Body Diode)
Modified MOSPOWER D
- 14 A
symbol showing
G
the integral P-N
- 56 A
S
Junction rectifier.
I_S
Continuous Source Current
(Body Diode)
I_SM
Source Current¹
(Body Diode)
Modified MOSPOWER
D
-9 A
symbol showing
G
the integral P-N
- 36 A
S
Junction rectifier.
V_SD Diode Forward Voltage¹
V_SD Diode Forward Voltage¹
t_rr
Reverse Recovery Time
- 2.5 V ^{TC = 25 C, IS = -14 A, VGS = 0}
- 2.5 V T_C = 25 C, I_S = -12 A, V_GS = 0
100
ns ^{TJ = 150 C, IF = IS,}
dl_F/ds = 100 A/ms
V_SD Diode Forward Voltage¹
V_SD Diode Forward Voltage¹
t_rr
Reverse Recovery Time
-2
-2
250
V ^{TC = 25 C, IS = -9 A, VGS = 0}
V T_C = 25 C, I_S = -8 A, V_GS = 0
ns ^{TJ = 150 C, IF = IS,}
dl_F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.