MBRS320 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – SCHOTTKY POWER RECTIFIER

MBRS320
Bulletin PD-20645 rev. D 03/03
Voltage Ratings
Part number
V_R Max. DC Reverse Voltage (V)
V_RWM Max. Working Peak Reverse Voltage (V)
MBRS320
20
Absolute Maximum Ratings
Parameters
Value Units Conditions
I_F(AV) Max. Average Forward Current
3.0
I_FSM Max. Peak One Cycle Non-Repetitive 820
Surge Current
80
E_AS Non Repetitive Avalanche Energy
4
I_AR Repetitive Avalanche Current
1.0
A 50% duty cycle @ T_L = 136°C, rectangular wave form
5µs Sine or 3µs Rect. pulse Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated V_RRM applied
mJ T_J = 25 °C, I_AS = 1.0A, L = 8mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by T_J max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
Typ. Max. Units Conditions
V_FM Max. Forward Voltage Drop (1)
I_RM Max. Reverse Leakage Current (1)
C_T Typical Junction Capacitance
L_S Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
0.41
0.45
0.29
0.35
0.04
8.0
23
360
3.0
-
0.45
0.53
0.36
0.46
0.5
20
35
-
-
10000
V @ 3A
V @ 6A
T_J = 25 °C
V @ 3A
V @ 6A
T_J = 125 °C
mA T _J = 25 °C
mA T_J = 100 °C
V_R = rated V_R
mA T_J = 125 °C
pF V_R = 5V_DC (test signal range 100kHz to
1Mhz), @ 25°C
nH Measured lead to lead 5mm from package body
V/ µs (Rated V_R)
Thermal-Mechanical Specifications
Parameters
Value Units
Conditions
T_J Max.Junction Temperature Range (*) - 65 to 150 °C
T_stg Max. Storage Temperature Range - 65 to 150 °C
R_thJL Max. Thermal Resistance Junction
12 °C/W
to Lead
(**)
DC operation
R_thJA Max. Thermal Resistance Junction
to Ambient
46 °C/W
Wt Approximate Weight
0.24(0.008) gr (oz)
Case Style
SMC
Similar DO-214AB
Device Marking
IR32
(*) dPtot
1
<
thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
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