JANTX2N6788 Datasheet, PDF (2/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

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JANTX2N6788, JANTXV2N6788 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
—
—
—
2.0
1.5
—
—
—
—
7.7
0.7
2.0
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—— V
0.10 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.30
— 0.345 Ω
— 4.0 V
— — S( )
VGS = 10V, ID = 3.5A 
VGS = 10V, ID = 6.0A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 3.5A 
— 25
— 250
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
— 100 _nA
— -100
VGS = 20V
VGS = -20V
— 17
— 4.0 nC
VGS = 10V, ID = 6.0A
VDS = Max. Rating x 0.5
— 7.7
see figures 6 and 13
— 40
—
—
70
40
ns
VDD = 50V, ID = 6.0A,
RG = 7.5Ω, VGS = 10V
— 70
see figure 10
5.0 —
15 —
Measured from the _{Modified MOSFET}
drain lead, 6mm (0.25 _{symbol showing the}
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
350 —
150 — pF
24 —
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
——
6.0
A ^{Modified MOSFET symbol showing the}
— — 24
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
— — 1.8 V
— — 240 ns
— — 2.0 µC
Tj = 25°C, IS = 6.0A, VGS = 0V 
Tj = 25°C, IF = 6.0A, di/dt ≤ 100A/µs
VDD ≤ 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 6.25
— — 175 K/W
Test Conditions
Typical socket mount
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