JANTX2N6770 Datasheet, PDF (2/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)

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JANTX2N6770, JANTXV2N6770 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
500 — — V
— 0.78 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— — 0.40
— — 0.50 Ω
2.0 — 4.0 V
5.5 — — S ( )
VGS = 10V, ID = 7.75A
VGS = 10V, ID = 12A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 7.75A 
—
—
—
—
25
250
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
— 100 _nA
— — -100
VGS = 20V
VGS = -20V
55 — 120
5.0 — 19 nC
VGS = 10V, ID = 12A
VDS = Max. Rating x 0.5
27 — 70
see figures 6 and 13
— — 35
—
—
— 190
— 170
ns
VDD = 250V, ID = 12A,
RG = 3.5Ω, VGS = 10V
— — 130
see figure 10
— 5.0 —
Measured from the _{Modified MOSFET}
drain lead, 6mm (0.25 _{symbol showing the}
in.) from package to internal inductances.
—
13 —
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
— 2700 —
— 600 — pF
— 240 —
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 12
— — 48
A ^{Modified MOSFET symbol showing the}
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
— — 1.7 V
— — 1600 ns
— — 14 µC
Tj = 25°C, IS = 12A, VGS = 0V 
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
VDD ≤ 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 0.83
— — 48 K/W
Test Conditions
To Order