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JANTX2N6766_15 Datasheet, PDF (2/7 Pages) International Rectifier – Repetitive Avalanche Ratings
IRF250
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 — — V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.29 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.085
—
— 0.090 Ω
VGS = 10V, ID =19A➃
VGS =10V, ID =30A ➃
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 — 4.0 V
9.0 — — S ( )
VDS = VGS, ID =250µA
VDS > 15V, IDS =19A➃
IDSS
Zero Gate Voltage Drain Current
— — 25
— — 250 µA
VDS=160V, VGS=0V
VDS =160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
— 100 nA
IGSS
Gate-to-Source Leakage Reverse
— — -100
VGS =20V
VGS =-20V
Qg
Total Gate Charge
55 — 115
VGS =10V, ID=30A
Qgs
Gate-to-Source Charge
8
— 22 nC
VDS =100V
Qgd
Gate-to-Drain (‘Miller’) Charge
30 — 60
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 35
— — 190
ns
— — 170
VDD =100V, ID =30A,
RG =2.35Ω
tf
Fall Time
— — 130
LS + LD
Total Inductance
— 6.1 — nH Measured from the center of
drain pad to center of source
pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
— 3500
— 700 — pF
— 110 —
VGS = 0V, VDS =25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — 30
A
— — 120
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.9 V
— — 950 nS
— — 9.0 µc
Tj = 25°C, IS =30A, VGS = 0V ➃
Tj = 25°C, IF = 30A, di/dt ≤100A/µs
VDD ≤50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 0.83
°C/W
— — 30
Test Conditions
Typical socket mount
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