JANTX2N6758_15 Datasheet, PDF (2/7 Pages) International Rectifier – Repetitive Avalanche Ratings

IRF230
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 — — V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.29 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.40
—
— 0.49 ^Ω
VGS = 10V, ID =6.0A➃
VGS =10V, ID =9.0A ➃
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 — 4.0 V
3.0 — — S ( )
VDS = VGS, ID =250µA
VDS > 15V, IDS =6.0A➃
IDSS
Zero Gate Voltage Drain Current
— — 25
— — 250 ^µA
VDS=160V, VGS=0V
VDS =160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
— 100 _nA
IGSS
Gate-to-Source Leakage Reverse
— — -100
VGS =20V
VGS =-20V
Qg
Total Gate Charge
16 — 39
VGS =10V, ID= 9.0A
Qgs
Gate-to-Source Charge
3.0 — 5.7 nC
VDS =100V
Qgd
Gate-to-Drain (‘Miller’) Charge
8.0 — 20
td_(on)
tr
td_(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 35
— — 80
ns
— — 60
VDD =100V, ID =9.0A,
RG =7.5Ω
tf
Fall Time
— — 40
LS ₊ LD
Total Inductance
— 6.1 — nH _{Measured from the center of}
drain pad to center of source
pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
— 600
— 250 — pF
— 80 —
VGS = 0V, VDS =25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — 9.0 _A
— — 36
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.4 V
— — 500 nS
— — 6.0 µc
Tj = 25°C, IS =9.0A, VGS = 0V ➃
Tj = 25°C, IF = 9.0A, di/dt ≤100A/µs
VDD ≤50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
Min Typ Max Units
— — 1.67 _°C/W
— — 30
Test Conditions
Typical socket mount
2
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