IRLZ24NSPBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Advanced Process Technology

IRLZ24NS/LPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
55 ––– ––– V
––– 0.061 ––– V/°C
––– ––– 0.060
––– ––– 0.075 Ω
––– ––– 0.105
1.0 ––– 2.0 V
8.3 ––– ––– S
––– ––– 25 _µA
––– ––– 250
––– ––– 100
––– ––– -100 ^nA
––– ––– 15
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA…
V_GS = 10V, I_D = 11A „
V_GS = 5.0V, I_D = 11A „
V_GS = 4.0V, I_D = 9.0A „
V_DS = V_GS, I_D = 250µA
V_DS = 25V, I_D = 11A…
V_DS = 55V, V_GS = 0V
V_DS = 44V, V_GS = 0V, T_J = 150°C
V_GS = 16V
V_GS = -16V
I_D = 11A
Q_gs
Gate-to-Source Charge
––– ––– 3.7 nC V_DS = 44V
Q_gd
Gate-to-Drain ("Miller") Charge
––– ––– 8.5
V_GS = 5.0V, See Fig. 6 and 13 „…
t_d(on)
t_r
t_d(off)
t_f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 7.1 –––
––– 74 –––
––– 20 –––
––– 29 –––
V_DD = 28V
ns ^{ID = 11A}
R_G = 12Ω, V_GS = 5.0V
R_D = 2.4Ω, See Fig. 10 „…
L_S
Internal Source Inductance
––– ^7.5 –––
Between lead,
nH _{and center of die contact}
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 480 –––
––– 130 –––
V_GS = 0V
pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 61 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I _SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 18
A
showing the
integral reverse
G
––– ––– 72
p-n junction diode.
S
––– ––– 1.3
––– 60 90
––– 130 200
V T_J = 25°C, I_S = 11A, V_GS = 0V „
ns T_J = 25°C, I_F = 11A
nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 25V, starting T_J = 25°C, L = 790µH
R_G = 25Ω, I_AS = 11A. (See Figure 12)
ƒ I_SD ≤ 11A, di/dt ≤ 290A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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