IRLU2703PBF Datasheet, PDF (2/11 Pages) International Rectifier – Logic-Level Gate Drive

IRLR/U2703PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
V_GS(th)
g_fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
30 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.030 ––– V/°C Reference to 25°C, I_D = 1mA
–––
–––
––– 0.045
––– 0.065
Ω
V_GS = 10V, I_D = 14A „
V_GS = 4.5V, I_D = 12A „
1.0 ––– ––– V V_DS = V_GS, I_D = 250µA
6.4 ––– ––– S V_DS = 25V, I_D = 14A‡
––– ––– 25
––– ––– 250
µA ^{VDS = 30V, VGS = 0V}
V_DS = 24V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 16V
––– ––– -100
V_GS = -16V
––– ––– 15
I_D = 14A
––– ––– 4.6 nC V_DS = 24V
––– ––– 9.3
V_GS = 4.5V, See Fig. 6 and 13 „‡
––– 8.5 –––
V_DD = 15V
––– 140 –––
––– 12 –––
ns ^{ID = 14A}
R_G = 12Ω, V_GS = 4.5V
––– 20 –––
R_D = 1.0Ω, See Fig. 10 „‡
Between lead,
D
––– 4.5 ––– nH _{6mm (0.25in.)}
L_S
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact†
S
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
––– 450 –––
––– 210 –––
––– 110 –––
V_GS = 0V
pF V_DS = 25V
ƒ = 1.0MHz, See Fig. 5‡
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 23 …
A
showing the
integral reverse
G
––– ––– 96
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 14A, V_GS = 0V „
––– 65 97 ns T_J = 25°C, I_F = 14A
––– 140 210 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 15V, starting T_J = 25°C, L =570µH
R_G = 25Ω, I_AS = 14A. (See Figure 12)
ƒ I_SD ≤ 14A, di/dt ≤ 140A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
… Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
† This is applied for I-PAK, L_S of D-PAK is measured
between lead and center of die contact.
‡ Uses IRL2703 data and test conditions.
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