IRLR8729PBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Ultra-Low Gate Impedance

IRLR/U8729PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-to-Source Breakdown Voltage
30 ––– ––– V V_GS = 0V, I_D = 250µA
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
21
6.0
8.9
––– mV/°C Reference to 25°C, I_D = 1mA
e 8.9 _mΩ V_GS = 10V, I_D = 25A
e 11.9
V_GS = 4.5V, I_D = 20A
Gate Threshold Voltage
1.35 1.8 2.35 V V_DS = V_GS, I_D = 25µA
Gate Threshold Voltage Coefficient
––– -6.2 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA ^{VDS = 24V, VGS = 0V}
––– ––– 150
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
gfs
Forward Transconductance
Q_g
Total Gate Charge
91 ––– –––
––– 10 16
S V_DS = 15V, I_D = 20A
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
––– 2.1 –––
V_DS = 15V
––– 1.3 ––– nC V_GS = 4.5V
––– 4.0 –––
I_D = 20A
––– 2.6 –––
See Fig. 16
––– 4.8 –––
––– 6.3 ––– nC V_DS = 16V, V_GS = 0V
R_G
Gate Resistance
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 1.6 2.7
––– 10 –––
Ω
e V_DD = 15V, V_GS = 4.5V
––– 47 ––– _ns I_D = 20A
––– 11 –––
R_G = 1.8Ω
––– 10 –––
See Fig. 14
C_iss
Input Capacitance
––– 1350 –––
V_GS = 0V
C_oss
Output Capacitance
––– 280 ––– pF V_DS = 15V
C_rss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
E_AS
d Single Pulse Avalanche Energy
I_AR
Ù Avalanche Current
E_AR
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
74
20
5.5
Units
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
f ––– –––
58
––– –––
260
––– ––– 1.0
MOSFET symbol
A ^{showing the}
integral reverse
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 20A, V_GS = 0V
––– 16
––– 19
24
29
e ^{ns TJ = 25°C, IF = 20A, VDD = 15V}
nC di/dt = 300A/µs
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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