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| IRLR8726PBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRLR/U8726PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
VGS(th)
ÎVGS(th)/ÎTJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
73
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
20
4.0
5.8
1.80
-8.6
âââ
âââ
âââ
âââ
âââ
15
3.7
1.9
5.7
3.7
7.6
10
2.0
12
49
15
16
2150
480
205
âââ
âââ
5.8
8.0
2.35
âââ
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
e mΩ VGS = 10V, ID = 25A
e VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 50μA
mV/°C
1.0
150
100
-100
âââ
23
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 20A
âââ
VDS = 15V
âââ nC VGS = 4.5V
âââ
ID = 20A
âââ
See Fig. 15
âââ
âââ nC VDS = 15V, VGS = 0V
3.5 Ω
âââ
e VDD = 15V, VGS = 4.5V
âââ
ID = 20A
âââ ns RG = 1.8Ω
âââ
See Fig. 13
âââ
VGS = 0V
âââ pF VDS = 15V
âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
120
20
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
f âââ âââ 86
MOSFET symbol
A showing the
âââ âââ 340
integral reverse
âââ âââ 1.0
âââ 24 36
âââ 52 78
p-n junction diode.
e V TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
e nC di/dt = 300A/μs
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