IRLR8103VPBF Datasheet, PDF (2/8 Pages) International Rectifier – N-Channel Application-Specific MOSFETs

IRLR8103VPbF
Electrical Characteristics
Parameter
Symbol Min Typ Max Units
Conditions
Drain-to-Source Breakdown Voltage
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
BV_DSS
R_DS(on)
V_GS(th)
I_DSS
30 ––– ––– V VGS = 0V, ID = 250µA
–––
–––
6.9 9.0
7.9 10.5
dd _mΩ
V_GS = 10V, I_D = 15A
V_GS = 4.5V, I_D = 15A
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 50 µA VDS = 30V, VGS = 0V
––– ––– 20
––– ––– 100
µA ^{VDS = 24V, VGS = 0}
V_DS = 24V, V_GS = 0, T_J = 100°C
Gate-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
I_GSS
––– ––– ±100 nA VGS = ± 20V
Q_G
––– 27 –––
V_GS = 5V, I_D = 15A, V_DS = 16V
Q_G
––– 23 –––
V_GS = 5V, V_DS < 100mV
Pre-Vth Gate-Source Charge
Q_GS1
––– 4.7 –––
Post-Vth Gate-Source Charge
Gate to Drain Charge
Q_GS2
Q_GD
––– 2.0 ––– nC
V_DS = 16V, I_D = 15A
––– 9.7 –––
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Q_SW
Q_OSS
––– 12 –––
––– 29 –––
V_DS = 16V, V_GS = 0
Gate Resistance
R_G
0.8 ––– 3.1 Ω
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
––– 10 –––
V_DD = 16V
t_r
––– 9 ––– _ns I_D = 15A
t_d(off)
––– 24 –––
V_GS = 5.0V
t_f
––– 18 –––
Clamped Inductive Load
Input Capacitance
Output Capacitance
C_iss
––– 2672 –––
C_oss
––– 1064 ––– pF VGS = 16V, VGS=0
Reverse Transfer Capacitance
C_rss
––– 109 –––
Source-Drain Rating & Characteristics
Parameter
Diode Forward Voltage
f Reverse Recovery Charge
Symbol Min Typ Max Units
Conditions
V_SD
d _{––– 0.9 1.3 V} IS = 15A , V_GS = 0V
Q_rr
––– 103 ––– nC di/dt ~ 700A/µs
Reverse Recovery Charge
f (with Parallel Schottky)
Q_rr(s)
V_DS = 16V, V_GS = 0V, I_F = 15A
––– 96 ––– nC di/dt = 700A/µs , (with 10BQ040)
V_DS= 16V, V_GS = 0V, I_F = 15A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Typ = measured - Q_oss
… Typical values of R_DS(on) measured at V_GS = 4.5V, Q_G, Q_SW and Q_OSS measured at V_GS = 5.0V, I_F = 15A.
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