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| IRLR7811WPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET®Power MOSFET | |||
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IRLR7811WPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
âÎVDSS/âTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
âVGS(th)/âTJ Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qg
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge Control Fet
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Total Gate Charge Sync Fet
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 27 âââ mV/°C Reference to 25°C, ID = 1mA Â
âââ 5.8 10.5 m⦠VGS = 10V, ID = 15A Â
âââ 7.0 15
VGS = 4.5V, ID = 12A
âââ 1.5 2.5 V VDS = VGS, ID = 250µA
âââ -5.0 âââ mV/°C
âââ âââ 30
âââ âââ 150
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 12V
âââ âââ -100
VGS = -12V
58 âââ âââ S VDS = 15V, ID = 12A
âââ 21 31 nC
âââ 5.0 âââ
VDS = 20V
âââ 1.7 âââ
VGS = 4.5V
âââ 6.6 âââ nC ID = 12A
âââ 5.5 âââ
âââ 8.3 âââ
âââ 17
âââ 10 âââ
VDS = 16V, VGS = 0V
âââ 1.6 âââ
âââ 18 âââ
VDD = 16V, VGS = 4.5VÂ
âââ 4.8 âââ ns ID = 12A
âââ 11 âââ
Clamped Inductive Load
âââ 23 âââ
âââ 2260 âââ
VGS = 0V
âââ 420 âââ pF VDS = 15V
âââ 180 âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
140
12
7.1
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 64Â A showing the
integral reverse
G
âââ âââ 260
p-n junction diode.
S
âââ âââ 1.2 V TJ = 25°C, IS = 12A, VGS = 0V Â
âââ 30 45
âââ 27 41
ns TJ = 25°C, IF =12A
nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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