IRLR4343 Datasheet, PDF (2/10 Pages) International Rectifier – DIGITAL AUDIO MOSFET

IRLR/U4343 & IRLU4343-701
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V ^VGS ^{= 0V, I}D ^{= 250µA}
∆ΒV_DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C ^{Reference to 25°C, I}D ^{= 1mA}
Static Drain-to-Source On-Resistance ––– 42 50 mΩ ^VGS ^{= 10V, I}D ^{= 4.7A e}
––– 57 65
V_GS = 4.5V, I_D = 3.8A e
V_GS(th)
Gate Threshold Voltage
1.0 ––– ––– V ^VDS ^{= V}GS^{, I}D ^{= 250µA}
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -4.4 ––– mV/°C
––– ––– 2.0 µA ^VDS ^{= 55V, V}GS ^{= 0V}
––– ––– 25
V_DS = 55V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA ^VGS ^{= 20V}
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
g_fs
Forward Transconductance
8.8 ––– ––– S ^VDS ^{= 25V, I}D ^{= 19A}
Q_g
Total Gate Charge
––– 28 42
V_DS = 44V
Q_gs
Pre-Vth Gate-to-Source Charge
––– 3.5 –––
V_GS = 10V
Q_gd
Gate-to-Drain Charge
––– 9.5 –––
I_D = 19A
Q_godr
t_d(on)
Gate Charge Overdrive
Turn-On Delay Time
––– 15 –––
––– 5.7 –––
See Fig. 6 and 19
V_DD = 28V, V_GS = 10V e
t_r
Rise Time
––– 19 –––
I_D = 19A
t_d(off)
Turn-Off Delay Time
––– 23 ––– ns RG = 2.5Ω
t_f
Fall Time
––– 5.3 –––
C_iss
Input Capacitance
––– 740 –––
V_GS = 0V
C_oss
Output Capacitance
––– 150 ––– pF ^VDS ^{= 50V}
C_rss
Reverse Transfer Capacitance
––– 59 –––
ƒ = 1.0MHz,
See Fig.5
C_oss
Effective Output Capacitance
––– 250 –––
V_GS = 0V, V_DS = 0V to -44V
D
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
G
L_S
Internal Source Inductance
––– 7.5 –––
from package
S
and center of die contact f
Avalanche Characteristics
Parameter
E_AS
Single Pulse Avalanche Energyd
I_AR
Avalanche Current i
E_AR
Repetitive Avalanche Energy i
Diode Characteristics
Parameter
I_S @ T_C = 25°C Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) c
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Typ.
Max.
–––
160
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
52
100
Max. Units
Conditions
26
MOSFET symbol
A showing the
80
integral reverse
p-n junction diode.
1.2 V ^TJ ^{= 25°C, I}S ^{= 19A, V}GS ^{= 0V e}
78 ns ^TJ ^{= 25°C, I}F ^{= 19A}
150 nC di/dt = 100A/µs e
2
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