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| IRLR3715Z Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRLR/U3715Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20
âââ
âââ
âââ
1.65
âââ
âââ
13
8.8
12.4
2.1
-4.8
âââ V VGS = 0V, ID = 250µA
âââ mV/°C Reference to 25°C, ID = 1mA
e 11 m⦠VGS = 10V, ID = 15A
15.5
e VGS = 4.5V, ID = 12A
2.55 V VDS = VGS, ID = 250µA
âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 16V, VGS = 0V
âââ âââ 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
33 âââ âââ
âââ 7.2 11
S VDS = 10V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 2.3 âââ
âââ 0.90 âââ
âââ 2.6 âââ
âââ 1.4 âââ
VDS = 10V
nC VGS = 4.5V
ID = 12A
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 3.5 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 3.8 âââ nC VDS = 10V, VGS = 0V
âââ 7.8 âââ
e VDD = 10V, VGS = 4.5V
âââ 13 âââ
ID = 12A
âââ 10 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 4.3 âââ
Ciss
Input Capacitance
âââ 810 âââ
VGS = 0V
Coss
Output Capacitance
âââ 270 âââ pF VDS = 10V
Crss
Reverse Transfer Capacitance
âââ 150 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
19
12
4.0
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
f Min. Typ. Max. Units
Conditions
âââ âââ 49
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
A showing the
âââ âââ 200
integral reverse
G
âââ âââ 1.0
p-n junction diode.
S
e V TJ = 25°C, IS = 12A, VGS = 0V
âââ
âââ
11
3.5
17
5.3
e ns TJ = 25°C, IF = 12A, VDD = 10V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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