IRLMS1503_05 Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRLMS1503PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V V_GS = 0V, I_D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.037 –––
––– ––– 0.100
––– ––– 0.20
V/°C
Ω
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 2.2A ƒ
V_GS = 4.5V, I_D = 1.1A ƒ
V_GS(th)
Gate Threshold Voltage
1.0 ––– ––– V V_DS = V_GS, I_D = 250µA
g_fs
Forward Transconductance
1.1 ––– ––– S V_DS = 10V, I_D = 1.1A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA V_GS = -20V
––– ––– 100
V_GS = 20V
Q_g
Total Gate Charge
––– 6.4 9.6
I_D = 2.2A
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 1.1 1.7
––– 1.9 2.8
nC V_DS = 24V
V_GS = 10V, See Fig. 6 and 9 ƒ
t_d(on)
Turn-On Delay Time
––– 4.6 –––
V_DD = 15V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 4.4 ––– _ns I_D = 2.2A
––– 10 –––
R_G = 6.0Ω
––– 2.0 –––
R_D = 6.7Ω, See Fig. 10 ƒ
C_iss
Input Capacitance
––– 210 –––
V_GS = 0V
C_oss
Output Capacitance
––– 90 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 32 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 1.7
showing the
A _{integral reverse}
G
––– ––– 18
p-n junction diode.
S
––– ––– 1.2
––– 36 54
––– 39 58
V T_J = 25°C, I_S = 2.2A, V_GS = 0V ƒ
ns T_J = 25°C, I_F = 2.2A
nC di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ I_SD ≤ 2.2A, di/dt ≤ 150A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 5sec.
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