IRLML6302TR Datasheet, PDF (2/8 Pages) International Rectifier – generation v technology

IRLML6302PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V V_GS = 0V, I_D = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -4.9 ––– mV/°C Reference to 25°C, I_D = -1mA
R_DS(ON)
Static Drain-to-Source On-Resistance
––– ––– 0.60
––– ––– 0.90
Ω
V_GS = -4.5V, I_D = -0.61A ƒ
V_GS = -2.7V, I_D = -0.31A ƒ
V_GS(th)
Gate Threshold Voltage
-0.70 ––– -1.5 V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
0.56 ––– ––– S V_DS = -10V, I_D = -0.31A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA ^{VDS = -16V, VGS = 0V}
V_DS = -16V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA V_GS = -12V
––– ––– 100
V_GS = 12V
Q_g
Total Gate Charge
––– 2.4 3.6
I_D = -0.61A
Q_gs
Gate-to-Source Charge
––– 0.56 0.84 nC V_DS = -16V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 1.0 1.5
V_GS = -4.5V, See Fig. 6 and 9 ƒ
t_d(on)
Turn-On Delay Time
––– 13 –––
V_DD = -10V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 18 ––– _ns I_D = -0.61A
––– 22 –––
R_G = 6.2Ω
t_f
Fall Time
––– 22 –––
R_D = 16Ω, See Fig. 10 ƒ
C_iss
Input Capacitance
––– 97 –––
V_GS = 0V
C_oss
Output Capacitance
––– 53 ––– pF V_DS = -15V
C_rss
Reverse Transfer Capacitance
––– 28 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -0.54 _{A showing the}
––– ––– -4.9
integral reverse
p-n junction diode.
D
G
S
––– ––– -1.2 V T_J = 25°C, I_S = -0.61A, V_GS = 0V „
––– 35 53 ns T_J = 25°C, I_F = -0.61A
––– 26 39 nC di/dt = -100A/µs „
Notes:
 Repetitive rating; pulse width
limited by max. junction temperature. ( See fig. 11 )
‚ I_SD ≤ -0.61A, di/dt ≤ 76A/µs, V_DD≤V_(BR)DSS,
T_J ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 5sec.
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