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IRLML5203TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFETPower MOSFET | |||
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IRLML5203PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-30 âââ âââ
âââ 0.019 âââ
âââ âââ 98
âââ âââ 165
-1.0 âââ -2.5
3.1 âââ âââ
âââ âââ -1.0
âââ âââ -5.0
âââ âââ -100
âââ âââ 100
âââ 9.5 14
âââ 2.3 3.5
âââ 1.6 2.4
âââ 12 âââ
âââ 18 âââ
âââ 88 âââ
âââ 52 âââ
âââ 510 âââ
âââ 71 âââ
âââ 43 âââ
Units
V
V/°C
mâ¦
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.0A Â
VGS = -4.5V, ID = -2.6A Â
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.0A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -3.0A
VDS = -24V
VGS = -10V Â
VDD = -15V Â
ID = -1.0A
RG = 6.0â¦
VGS = -10V
VGS = 0V
VDS = -25V
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ -1.3
showing the
A
integral reverse
G
ÂÂÂ ÂÂÂ -24
p-n junction diode.
S
âââ âââ -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V Â
âââ 17 26 ns TJ = 25°C, IF = -1.3A
âââ 12 18 nC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Surface mounted on FR-4 board, t ⤠5sec.
2
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