IRLL110PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRLL110PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
I_DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
–––
1.0
0.57
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.3
47
16
18
Max.
–––
–––
0.54
0.76
2.0
–––
25
250
100
-100
6.1
2.6
3.3
–––
–––
–––
–––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 5.0V, I_D = 0.90A „
V_GS = 4.0V, I_D = 0.75A
V_DS = V_GS, I_D = 250µA
V_DS = 25V, I_D = 0.90 A
V_DS = 100V, V_GS = 0V
V_DS = 80V, V_GS = 0V, T_J = 125°C
V_GS = 10V
V_GS = -10V
I_D = 5.6A
V_DS = 80V
V_GS = 5.0V, See Fig. 6 and 13 „
V_DD = 50V
I_D = 5.6A
R_G = 12 Ω
R_D = 8.4 Ω,
––– 4.0 –––
Between lead, 6mm(0.25in)
D
nH _{from package and center}
G
––– 6.0 –––
of die contact.
S
––– 250 –––
––– 80 –––
––– 15 –––
V_GS = 0V
pF V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 1.5
––– ––– 12
MOSFET symbol
showing the
A _{integral reverse}
p-n junction diode.
––– ––– 2.5 V T_J = 25°C, I_S = 1.5A, V_GS = 0V „
––– 110 130 ns T_J = 25°C, I_F = 5.6A
––– 0.50 0.65 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD=25V, starting T_J = 25°C, L = 25 mH
R_G = 25Ω, I_AS = 1.5A. (See Figure 12)
2
ƒ I_SD ≤5.6A, di/dt ≤ 75A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
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