 English |
|
|
|
|
|
|
|
| IRLB8743PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Optimized for UPS/Inverter Applications | |||
| |||
| ◁ |
IRLB8743PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
IDSS
IGSS
Drain-to-Source Breakdown Voltage
30 âââ âââ V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
âââ
17
2.5
3.5
âââ
3.2
4.2
mV/°C Reference to 25°C, ID = 1mA
ee mâ¦
VGS = 10V, ID = 40A
VGS = 4.5V, ID = 32A
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35 1.8 2.35 V
âââ -7.7 âââ mV/°C VDS = VGS, ID = 100µA
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 100
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
190 âââ âââ
âââ 36 54
S VDS = 15V, ID = 32A
âââ 9.1 âââ
VDS = 15V
âââ 4.2 âââ nC VGS = 4.5V
âââ 13 âââ
ID = 32A
âââ 13 âââ
Qsw
Qoss
Switch Charge (Qgs2 + Qgd)
Output Charge
âââ 17.2 âââ
âââ 21 âââ
nC VDS = 16V, VGS = 0V
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 0.85 1.5
âââ 23 âââ
âââ 92 âââ
âââ 25 âââ
âââ 36 âââ
e â¦
VDD = 15V, VGS = 4.5V
ns ID = 32A
RG = 1.8â¦
Ciss
Input Capacitance
âââ 5110 âââ
VGS = 0V
Coss
Output Capacitance
âââ 960 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 440 âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
ÃÂ Avalanche Current
EAR
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
310
32
14
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
f âââ âââ
150
MOSFET symbol
âââ âââ
A showing the
integral reverse
620
âââ âââ 1.0
e p-n junction diode.
V TJ = 25°C, IS = 32A, VGS = 0V
âââ 29
âââ 49
44
74
e ns TJ = 25°C, IF = 32A, VDD = 15V
nC di/dt = 200A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese