IRL3103PBF Datasheet, PDF (2/9 Pages) International Rectifier – Advanced Process Technology

IRL3103PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
V_GS(th)
g_fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
E_AS
Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
Conditions
30 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.028 –––
––– ––– 12
––– ––– 16
V/°C
mΩ
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 34A „
V_GS = 4.5V, I_D = 28A „
1.0 ––– ––– V V_DS = V_GS, I_D = 250µA
22 ––– ––– S V_DS = 25V, I_D = 34A„
––– ––– 25 _µA V_DS = 30V, V_GS = 0V
––– ––– 250
V_DS = 24V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 16V
––– ––– -100
V_GS = -16V
––– ––– 33
I_D = 34A
––– ––– 5.9 nC V_DS = 24V
––– ––– 17
V_GS = 4.5V, See Fig. 6 and 13
––– 8.9 –––
V_DD = 15V
––– 120 –––
I_D = 34A
––– 14 –––
R_G = 1.8Ω
––– 9.1 –––
V_GS = 4.5V, See Fig. 10 „
––– 4.5 –––
Between lead,
D
6mm (0.25in.)
nH _{from package}
G
––– 7.5 –––
and center of die contact
S
––– 1650 –––
V_GS = 0V
––– 650 –––
V_DS = 25V
––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1320…130† mJ I_AS = 34A, L = 0.22mH
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 64
A ^{showing the}
integral reverse
G
––– ––– 220
p-n junction diode.
S
––– ––– 1.2 V T_J = 25°C, I_S = 34A, V_GS = 0V „
––– 57 86 ns T_J = 25°C, I_F = 34A
––– 110 170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting T_J = 25°C, L = 220µH
R_G = 25Ω, I_AS = 34A, V_GS=10V (See Figure 12)
ƒ I_SD ≤ 34A, di/dt ≤ 120A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to T_J = 175°C .
2
www.irf.com