IRL1004SPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology

IRL1004S/LPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.04 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 0.0065
––– ––– 0.009 ^Ω
V_GS = 10V, I_D = 78A „
V_GS = 4.5V, I_D = 65A „
1.0 –––
V V_DS = V_GS, I_D = 250µA
63 ––– ––– S V_DS = 25V, I_D = 78A†
––– ––– 25 _µA V_DS = 40V, V_GS = 0V
––– ––– 250
V_DS = 32V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 16V
––– ––– -100
V_GS = -16V
––– ––– 100
I_D = 78A
––– ––– 32 nC V_DS = 32V
––– ––– 43
V_GS = 4.5V, See Fig. 6 and 13 „†
––– 16 –––
V_DD = 20V,
––– 210 –––
––– 25 –––
I_D = 78A,
ns R_G = 2.5Ω,
––– 14 –––
R_D = 0.18Ω, See Fig. 10 „†
––– ^7.5 ––– ^{nH Between lead,}
and center of die contact
––– 5330 –––
V_GS = 0V
––– 1480 ––– pF V_DS = 25V
––– 320 –––
ƒ = 1.0MHz, See Fig. 5…†
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)‡
I_SM
Pulsed Source Current
(Body Diode) ‡
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 130…
A ^{showing the}
integral reverse
G
––– ––– 520
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 78A, V_GS = 0V„
––– 78 120 ns T_J = 25°C, I_F = 78A
––– 180 270 nC di/dt = 100A/µs„†
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting T_J = 25°C, L = 0.23mH
R_G = 25Ω, I_AS = 78A. (See Figure 12)
ƒ I_SD ≤ 78A, di/dt ≤ 370A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4
† Uses IRL1004 data and test conditions
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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