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IRIS-W6754 Datasheet, PDF (2/8 Pages) International Rectifier – INTEGRATED SWITCHER
IRIS-W6754
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Defi ni ti on
IDpeak Drain Current * 1
Termi nal
s
Max. Ratings Units
1-3
15
A
Note
Single Pulse
IDMAX Maximum switching current *2
1-3
15
A
Ta=-20~+125℃
Single Pulse
EAS Single pulse avalanche energy *3 1 - 3
292
mJ VDD=99V,L=20mH
ILpeak=5.1A
Vcc Input voltage for control part
4-3
35
V
VSSOLP SS/OLP pin voltage
5-3
-0.5 ~ 6.0
V
IFB FB pin inflow current
6- 3
10
mA
VFB FB pin voltage
6- 3
-0.5 ~ 9.0
V within the limits of IFB
VOCPBD O.C.P/F.B pin voltage
7- 3
PD1 Power dissipation of MOSFET *4 1 - 3
-1.5 ~ 5.0
28.0
1.1
V
W
With infinite heatsink
Without heatsink
PD2
Power dissipation for control part
(MIC)
4-3
0.8
W
Specified by Vcc x
Icc
TF
Internal frame temperature in
operation
-
-20 ~ +115
℃
Refer to recommended
operating temperature
Top Operating ambient temperature
-
-20 ~ +115 ℃
Tstg Storage temperature
-
-40 ~ +125 ℃
Tch Channel temperature
-
150
℃
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve
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