IRIS-A6331 Datasheet, PDF (2/7 Pages) International Rectifier – INTEGRATED SWITCHER

IRIS-A6331
Absolute Maximum Ratings (Ta=25℃) (Refer Gnd 2 and 5)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings
8
3.54
8
3.54
EAS Single pulse avalanche energy *2
8-1
32
Vin Input voltage for control part
3-2
35
Vth O.C.P/F.B Pin voltage
4-2
6
PD1 Power dissipation for MOSFET *3 8-1
1.35
Power dissipation for control part
PD2
(Control IC) *4
3-2
0.14
Internal frame temperature
TF in operation
-
-20 ~ +125
Top Operating ambient temperature
-
-20 ~ +125
Tstg Storage temperature
-
-40 ~ +125
Tch Channel temperature
-
150
Units
A
A
mJ
V
V
W
W
℃
℃
℃
℃
Note
Single Pulse
V1-2=0.82V
Ta=-20~+125℃
Single Pulse
VDD=99V,L=20mH
IL=2.1A
*6
Specified by
Vin×Iin
Refer to recommended
operating temperature
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
Fig.1
V1-2
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive
voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop
occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by
V_1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
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