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IRHMS597064 Datasheet, PDF (2/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage -60 — — V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.064 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.017 Ω
VGS = -12V, ID = -45A Ã
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
-2.0 — -4.0 V
40 — — S ( )
—
— -10 µA
— — -25
VDS = VGS, ID = -1.0mA
VDS = -25V, IDS = -45A Ã
VDS = -48V ,VGS = 0V
VDS = -48V,
—
— -100 nA
— — 100
— — 160
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -45A
— — 60 nC
— — 65
VDS = -30V
— — 35
—
— 150 ns
— — 100
VDD = -30V, ID = -45A
VGS =-12V, RG = 2.35Ω
— — 35
— 6.8 — nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
— 8040 —
— 2780 — pF
— 310 —
— 2.2 — Ω
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 0.75MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
— — -45* A
— — -180
— — -5.0 V
— — 110 ns
— — 460 nC
Tj = 25°C, IS = -45A, VGS = 0V Ã
Tj = 25°C, IF =-45A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
— — 0.60
— 0.21 —
— — 48
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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