IRHLUC7970Z4 Datasheet, PDF (2/9 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT

IRHLUC7970Z4, 2N7627UC
Pre-Irradiation
Electrical Characteristics For P-Channel Die @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage -60
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
—
gfs
Forward Transconductance
0.5
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td_(on)
tr
td_(off)
tf
LS + LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
Typ Max Units
Test Conditions
—— V
VGS = 0V, ID = -250µA
-0.06 — V/°C Reference to 25°C, ID = -1.0mA
— 1.60 Ω
VGS = -4.5V, ID = -0.41A _Ã
— -2.0 V
3.6 — mV/°C
VDS = VGS, ID = -250µA
—— S
— -1.0
— -10 _µA
— -100
— 100 ^nA
— 3.6
— 1.5 nC
— 1.8
VDS = -10V, IDS = -0.41A Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.65A
VDS = -30V
— 23
— 22 ^ns
— 32
VDD = -30V, ID = -0.65A,
VGS = -5.0V, RG = 24Ω
— 26
33 —
nH ^{Measured from the center of}
drain pad to center of source pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
— 147 —
— 46 — pF
— 8.1 —
— 52 — Ω
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per P Channel Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
—
—
—
—
-0.65
-2.6
A
VSD Diode Forward Voltage
— — -5.0 V
Tj = 25°C, IS = -0.65A, VGS = 0V Ã
trr Reverse Recovery Time
— — 35 ns Tj = 25°C, IF = -0.65A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge
— — 9.8 nC
VDD ≤ -25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per P Channel Die)
Parameter
Min Typ Max Units
RthJA
Junction-to-Ambient
— — 125 _°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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