IRGPC20F Datasheet, PDF (2/6 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)

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IRGPC20F
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)CES Collector-to-Emitter Breakdown Voltage
V_(BR)ECS Emitter-to-Collector Breakdown Voltage
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
V_CE(on)
Collector-to-Emitter Saturation Voltage
V_GE(th)
∆V_GE(th)/∆T_J
g_fe
I_CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
I_GES
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 — — V V_GE = 0V, I_C = 250µA
20 — — V V_GE = 0V, I_C = 1.0A
— 0.72 — V/°C V_GE = 0V, I_C = 1.0mA
— 2.0 2.8
I_C = 9.0A
V_GE = 15V
— 2.6 — V I_C = 16A
See Fig. 2, 5
— 2.3 —
I_C = 9.0A, T _J = 150°C
3.0 — 5.5
V_CE = V_GE, I_C = 250µA
— -11 — mV/°C V_CE = V_GE, I_C = 250µA
2.9 5.1 — S V_CE = 100V, I _C = 9.0A
— — 250 µA V_GE = 0V, V_CE = 600V
— — 1000
V_GE = 0V, V_CE = 600V, T _J = 150°C
— — ±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 16 21
I_C = 9.0A
— 2.4 3.4 nC V_CC = 400V
See Fig. 8
— 7.9 10
V_GE = 15V
— 24 —
T_J = 25°C
— 13 —
— 160 270
ns I_C = 9.0A, V _CC = 480V
V_GE = 15V, R _G = 50Ω
— 310 600
Energy losses include "tail"
— 0.18 —
— 0.90 — mJ See Fig. 9, 10, 11, 14
— 1.08 2.0
— 25 —
T_J = 150°C,
— 18 —
— 210 —
ns I_C = 9.0A, V _CC = 480V
V_GE = 15V, R _G = 50Ω
— 600 —
Energy losses include "tail"
— 1.65 — mJ See Fig. 10, 14
— 13 — nH Measured 5mm from package
— 340 —
V_GE = 0V
— 63 — pF V_CC = 30V
See Fig. 7
— 5.9 —
ƒ = 1.0MHz
Notes:
Repetitive rating; V _GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
V_CC=80%(V_CES), V_GE=20V, L=10µH,
R_G= 50Ω, ( See fig. 13a )
Repetitive rating; pulse width
limited
by maximum junction
temperature.
Pulse width ≤ 80µs; duty factor ≤
0.1%.
C-70
Pulse width 5.0µs,
single shot.
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