IRGP4069DPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP4069DPbF/IRGP4069D-EPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V_(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
ΔV_(BR)CES/ΔT_J Temperature Coeff. of Breakdown Voltage
—
1.3
—
—
1.6 1.85
V_CE(on)
Collector-to-Emitter Saturation Voltage
—
1.9
—
—
2.0
—
V_GE(th)
ΔV_GE(th)/ΔTJ
Gate Threshold Voltage
Threshold Voltage temp. coefficient
4.0
—
6.5
—
-18
—
gfe
Forward Transconductance
—
25
—
I_CES
Collector-to-Emitter Leakage Current
—
1.0
70
—
770
—
V_FM
Diode Forward Voltage Drop
—
2.2
3.8
—
1.4
—
I_GES
Gate-to-Emitter Leakage Current
—
—
±100
Units Conditions
e V V_GE = 0V, I_C = 100μA
d ^{mV/°C VGE = 0V, IC = 1mA (25°C-175°C)}
I_C = 35A, V_GE = 15V, T_J = 25°C
d V I_C = 35A, V_GE = 15V, T_J = 150°C
d I_C = 35A, V_GE = 15V, T_J = 175°C
V VCE = VGE, IC = 1.0mA
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
S VCE = 50V, IC = 35A, PW = 60μs
μA VGE = 0V, VCE = 600V
V_GE = 0V, V_CE = 600V, T_J = 175°C
V IF = 35A
I_F = 35A, T_J = 175°C
nA VGE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Q_g
Total Gate Charge (turn-on)
—
69
104
Q_ge
Gate-to-Emitter Charge (turn-on)
—
18
27
Q_gc
Gate-to-Collector Charge (turn-on)
—
29
44
E_on
Turn-On Switching Loss
—
390 508
E_off
Turn-Off Switching Loss
—
632 753
E_total
Total Switching Loss
—
1022 1261
t_d(on)
Turn-On delay time
—
46
56
t_r
Rise time
—
33
42
t_d(off)
Turn-Off delay time
—
105 117
t_f
Fall time
—
44
54
E_on
Turn-On Switching Loss
—
1013
—
E_off
Turn-Off Switching Loss
—
929
—
E_total
Total Switching Loss
—
1942
—
t_d(on)
Turn-On delay time
—
43
—
t_r
Rise time
—
35
—
t_d(off)
Turn-Off delay time
—
127
—
t_f
Fall time
—
61
—
C_ies
Input Capacitance
—
2113
—
C_oes
Output Capacitance
—
197
—
C_res
Reverse Transfer Capacitance
—
65
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
—
—
Erec
t_rr
I_rr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
304
—
—
120
—
—
25
—
Units
Conditions
I_C = 35A
nC VGE = 15V
V_CC = 400V
I_C = 35A, V_CC = 400V, V_GE = 15V
μJ RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
I_C = 35A, V_CC = 400V, V_GE = 15V
ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C
I_C = 35A, V_CC = 400V, V_GE=15V
μJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C
Energy losses include tail & diode reverse recovery
I_C = 35A, V_CC = 400V, V_GE = 15V
ns RG = 10Ω, L = 200μH, LS = 150nH
T_J = 175°C
pF VGE = 0V
V_CC = 30V
f = 1.0Mhz
T_J = 175°C, I_C = 140A
V_CC = 480V, Vp =600V
Rg = 10Ω, V_GE = +20V to 0V
μs VCC = 400V, Vp =600V
Rg = 10Ω, V_GE = +15V to 0V
μJ TJ = 175°C
ns VCC = 400V, IF = 35A
A VGE = 15V, Rg = 10Ω, L =210μH, Ls = 150nH
Notes:
 V_CC = 80% (V_CES), V_GE = 20V, L = 19μH, R_G = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V_(BR)CES safely.
„ R_θ is measured at T_J of approximately 90°C.
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