IRGBC30U Datasheet, PDF (2/6 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)

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IRGBC30U
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)CES
V_(BR)ECS
∆V(BR)CES/∆TJ
V_CE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
V_GE(th)
∆V_GE(th)/∆T_J
g_fe
I_CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
I_GES
Gate-to-Emitter Leakage Current
Min.
600
20
—
—
—
—
3.0
—
3.1
—
—
—
Typ. Max. Units
—— V
—— V
0.63 — V/°C
2.2 3.0
2.7 — V
2.4 —
— 5.5
-11 — mV/°C
8.6 — S
— 250 µA
— 1000
— ±100 nA
Conditions
V_GE = 0V, I_C = 250µA
V_GE = 0V, I_C = 1.0A
V_GE = 0V, I_C = 1.0mA
I_C = 12A
V_GE = 15V
I_C = 23A
See Fig. 2, 5
I_C = 12A, T _J = 150°C
V_CE = V_GE, I_C = 250µA
V_CE = V_GE, I_C = 250µA
V_CE = 100V, I _C = 12A
V_GE = 0V, V_CE = 600V
V_GE = 0V, V_CE = 600V, T _J = 150°C
V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 29 36
I_C = 12A
— 4.8 6.8
— 12 17
nC V_CC = 400V
V_GE = 15V
See Fig. 8
— 24 —
T_J = 25°C
— 15 — ns I_C = 12A, V_CC = 480V
— 92 200
V_GE = 15V, R _G = 23Ω
— 93 190
Energy losses include "tail"
— 0.18 —
— 0.35 — mJ See Fig. 9, 10, 11, 14
— 0.53 1.0
— 24 —
— 15 —
— 160 —
— 200 —
T_J = 150°C,
ns I_C = 12A, V_CC = 480V
V_GE = 15V, R _G = 23Ω
Energy losses include "tail"
— 0.9 — mJ See Fig. 10, 14
— 7.5 — nH Measured 5mm from package
— 660 —
— 100 —
V_GE = 0V
pF V_CC = 30V
See Fig. 7
— 11 —
ƒ = 1.0MHz
Notes:
Repetitive rating; V _GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
V_CC=80%(V_CES), V_GE=20V, L=10µH,
R_G= 23Ω, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
C-658
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