IRGBC20KD2 Datasheet, PDF (2/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.0A)

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IRGBC20KD2
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V V_GE = 0V, I_C = 250µA
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
V_CE(on)
Collector-to-Emitter Saturation Voltage
— 0.37 — V/°C V_GE = 0V, I_C = 1.0mA
— 2.4 3.5
I_C = 6.0A
V_GE = 15V
— 3.6 — V I_C = 10A
See Fig. 2, 5
— 2.8 —
I_C = 6.0A, T _J = 150°C
V_GE(th)
Gate Threshold Voltage
3.0 — 5.5
V_CE = V_GE, I_C = 250µA
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage — -11 — mV/°C V_CE = V_GE, I_C = 250µA
g_fe
Forward Transconductance
1.9 3.3 — S V_CE = 100V, I _C = 6.0A
I_CES
Zero Gate Voltage Collector Current
— — 250 µA V_GE = 0V, V_CE = 600V
V_FM
Diode Forward Voltage Drop
— — 1700
— 1.4 1.7 V
V_GE = 0V, V_CE = 600V, T _J = 150°C
I_C = 8.0A
See Fig. 13
— 1.4 1.7
I_C = 8.0A, T _J = 150°C
I_GES
Gate-to-Emitter Leakage Current
— — ±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Qge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_sc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
t_rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
I_rr
Diode Peak Reverse Recovery Current
Q_rr
Diode Reverse Recovery Charge
di_(rec)M/dt
Notes:
Diode Peak Rate of Fall of Recovery
During t_b
Repetitive rating; V _GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Min. Typ. Max. Units
Conditions
— 17 26
— 4.3 6.8
I_C = 6.0A
nC V_CC = 480V
— 6.4 11
See Fig. 8
— 59 —
T_J = 25°C
— 38 —
— 110 210
ns I_C = 6.0A, V _CC = 480V
V_GE = 15V, R _G = 50Ω
— 80 120
Energy losses include "tail" and
— 0.28 —
diode reverse recovery.
— 0.15 — mJ See Fig. 9, 10, 11, 18
— 0.43 0.90
10 — —
— 52 —
µs V_CC = 360V, T _J = 125°C
V_GE = 15V, R _G = 50Ω, V_CPK < 500V
T_J = 150°C, See Fig. 9, 10, 11, 18
— 35 —
— 170 —
ns I_C = 6.0A, V _CC = 480V
V_GE = 15V, R _G = 50Ω
— 170 —
Energy losses include "tail" and
— 0.7 — mJ diode reverse recovery.
— 7.5 — nH Measured 5mm from package
— 350 —
V_GE = 0V
— 50 —
— 4.7 —
pF V_CC = 30V
ƒ = 1.0MHz
See Fig. 7
— 37 55
— 55 90
ns T_J = 25°C See Fig.
T_J = 125°C
14
I_F = 8.0A
— 3.5 5.0
— 4.5 8.0
A T_J = 25°C See Fig.
T_J = 125°C
15
V _R = 200V
— 65 138 nC T_J = 25°C See Fig.
— 124 360
T_J = 125°C
16 di/dt = 200A/µs
— 240 — A/µs T_J = 25°C See Fig.
— 210 —
T_J = 125°C 17
V_CC=80%(V_CES), V_GE=20V, L=10µH,
R_G= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
C-898
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