IRGB420UD2 Datasheet, PDF (2/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V,Ic=7.5A)

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IRGB420UD2
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
V_CE(on)
Collector-to-Emitter Saturation Voltage
V_GE(th)
Gate Threshold Voltage
∆V_GE(th)/∆T_J Temp. Coeff. of Threshold Voltage
g_fe
Forward Transconductance
I_CES
Zero Gate Voltage Collector Current
V_FM
Diode Forward Voltage Drop
I_GES
Gate-to-Emitter Leakage Current
500 — — V V_GE = 0V, I_C = 250µA
— 0.47 — V/°C V_GE = 0V, I_C = 1.0mA
— 2.4 2.9
I_C = 7.5A
V_GE = 15V
— 3.1 — V I_C = 14A
See Fig. 2, 5
— 2.7 —
I_C = 7.5A, T _J = 150°C
3.0 — 5.5
V_CE = V_GE, I_C = 250µA
— -10 — mV/°C V_CE = V_GE, I_C = 250µA
1.2 2.0 — S V_CE = 100V, I _C = 7.5A
— — 250 µA V_GE = 0V, V_CE = 500V
— — 1700
V_GE = 0V, V_CE = 500V, T _J = 150°C
— 1.4 1.7 V I_C = 8.0A
See Fig. 13
— 1.3 1.6
I_C = 8.0A, T _J = 150°C
— — ±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
di_(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t_b
— 15 23
I_C = 7.5A
— 3.7 5.6 nC V_CC = 400V
— 6.5 9.8
See Fig. 8
— 65 —
T_J = 25°C
— 44 —
— 140 210
ns I_C = 7.5A, V _CC = 400V
V_GE = 15V, R _G = 50Ω
— 110 160
Energy losses include "tail" and
— 0.25 —
diode reverse recovery.
— 0.25 — mJ See Fig. 9, 10, 11, 18
— 0.50 0.80
— 60 —
T_J = 150°C, See Fig. 9, 10, 11, 18
— 44 —
— 230 —
ns I_C = 7.5A, V _CC = 480V
V_GE = 15V, R _G = 50Ω
— 220 —
Energy losses include "tail" and
— 0.8 — mJ diode reverse recovery.
— 7.5 — nH Measured 5mm from package
— 330 —
V_GE = 0V
— 47 — pF V_CC = 30V
See Fig. 7
— 5.9 —
ƒ = 1.0MHz
— 37 55 ns T_J = 25°C See Fig.
— 55 90
T_J = 125°C
14
I_F = 8.0A
— 3.5 5.0 A T_J = 25°C See Fig.
— 4.5 8.0
T_J = 125°C
15
V _R = 200V
— 65 138 nC T_J = 25°C See Fig.
— 124 360
T_J = 125°C
16
di/dt = 200A/µs
— 240 — A/µs T_J = 25°C See Fig.
— 210 —
T_J = 125°C 17
Notes:
Repetitive rating; V _GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
V_CC=80%(V_CES), V_GE=20V, L=10µH,
R_G= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
C-618
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