IRGB420U Datasheet, PDF (2/6 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)

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IRGB420U
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)CES
V_(BR)ECS
∆V(BR)CES/∆TJ
V_CE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
V_GE(th)
∆V_GE(th)/∆T_J
g_fe
I_CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
I_GES
Gate-to-Emitter Leakage Current
Min.
500
20
—
—
—
—
3.0
—
1.2
—
—
—
Typ. Max. Units
—— V
—— V
0.47 — V/°C
2.4 3.0
3.1 — V
2.7 —
— 5.5
-10 — mV/°C
2.0 — S
— 250 µA
— 1000
— ±100 nA
Conditions
V_GE = 0V, I_C = 250µA
V_GE = 0V, I_C = 1.0A
V_GE = 0V, I_C = 1.0mA
I_C = 7.5A
V_GE = 15V
I_C = 14A
See Fig. 2, 5
I_C = 7.5A, T _J = 150°C
V_CE = V_GE, I_C = 250µA
V_CE = V_GE, I_C = 250µA
V_CE = 100V, I _C = 7.5A
V_GE = 0V, V_CE = 500V
V_GE = 0V, V_CE = 500V, T _J = 150°C
V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 15 23
I_C = 7.5A
— 3.7 5.6
— 6.5 9.8
nC V_CC = 400V
V_GE = 15V
See Fig. 8
— 28 —
T_J = 25°C
— 11 — ns I_C = 7.5A, V _CC = 400V
— 72 110
V_GE = 15V, R _G = 50Ω
— 96 140
Energy losses include "tail"
— 0.13 —
— 0.08 — mJ See Fig. 9, 10, 11, 14
— 0.21 0.28
— 26 —
— 12 —
— 120 —
— 140 —
T_J = 150°C,
ns I_C = 7.5A, V _CC = 400V
V_GE = 15V, R _G = 50Ω
Energy losses include "tail"
— 0.35 — mJ See Fig. 10, 14
— 7.5 — nH Measured 5mm from package
— 330 —
— 47 —
V_GE = 0V
pF V_CC = 30V
See Fig. 7
— 5.9 —
ƒ = 1.0MHz
Notes:
Repetitive rating; V _GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
V_CC=80%(V_CES), V_GE=20V, L=10µH,
R_G= 50Ω, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
C-576
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