IRGB4064DPBF Datasheet, PDF (2/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB4064DPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)CES
∆V_(BR)CES/∆T_J
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V_CE(on)
Collector-to-Emitter Saturation Voltage
V_GE(th)
∆V_GE(th)/∆TJ
gfe
I_CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
V_FM
Diode Forward Voltage Drop
I_GES
Gate-to-Emitter Leakage Current
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.47
1.6
1.9
2.0
—
-11
6.9
—
328
2.5
1.7
—
Max. Units Conditions
—
f V V_GE = 0V, I_C = 100µA
— V/°C V_GE = 0V, I_C = 500µA (-55°C-175°C)
1.91
I_C = 10A, V_GE = 15V, T_J = 25°C
—
V I_C = 10A, V_GE = 15V, T_J = 150°C
—
I_C = 10A, V_GE = 15V, T_J = 175°C
6.5 V V_CE = V_GE, I_C = 275µA
— mV/°C V_CE = V_GE, I_C = 1.0mA (25°C - 175°C)
—
S V_CE = 50V, I_C = 10A, PW = 80µs
25 µA V_GE = 0V, V_CE = 600V
—
V_GE = 0V, V_CE = 600V, T_J = 175°C
3.1 V I_F = 10A
—
I_F = 10A, T_J = 175°C
±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Q_ge
Q_gc
E_on
E_off
E_total
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_total
t_d(on)
t_r
t_d(off)
t_f
C_ies
C_oes
C_res
RBSOA
SCSOA
Erec
t_rr
I_rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 21 32
— 5.3 8.0
— 8.9 13
— 29 71
— 200 308
— 229 339
— 27 37
— 15 23
— 79 90
— 21 30
— 99 —
— 316 —
— 415 —
— 27 —
— 16 —
— 98 —
— 33 —
— 594 —
— 49 —
— 17 —
FULL SQUARE
5 ——
— 191 —
— 62 —
— 16 —
I_C = 10A
nC V_GE = 15V
V_CC = 400V
I_C = 10A, V_CC = 400V, V_GE = 15V
µJ R_G = 22Ω, L = 1.0mH, T_J = 25°C
Energy losses include tail & diode reverse recovery
I_C = 10A, V_CC = 400V, V_GE = 15V
ns R_G = 22Ω, L = 1.0mH, T_J = 25°C
I_C = 10A, V_CC = 400V, V_GE = 15V
fà µJ R_G=22Ω, L=1.0mH, T_J = 175°C
Energy losses include tail & diode reverse recovery
I_C = 10A, V_CC = 400V, V_GE = 15V
ns R_G = 22Ω, L = 1.0mH, T_J = 175°C
pF V_GE = 0V
V_CC = 30V
f = 1.0Mhz
T_J = 175°C, I_C = 40A
V_CC = 480V, Vp =600V
Rg = 22Ω, V_GE = +15V to 0V
µs V_CC = 400V, Vp =600V
Rg = 22Ω, V_GE = +15V to 0V
µJ T_J = 175°C
ns V_CC = 400V, I_F = 10A
A V_GE = 15V, Rg = 22Ω, L=1.0mH
Ref.Fig
CT6
5,6,7,9,
10 ,11
9,10,11,12
8
Ref.Fig
24
CT1
CT4
CT4
13,15
CT4
WF1,WF2
14,16
CT4
WF1,WF2
22
4
CT2
22, CT3
WF4
17,18,19
20,21
WF3
Notes:
V_CC = 80% (V_CES), V_GE = 15V, L = 28 µH, R_G = 22 Ω.
‚ Pulse width limited by max. junction temperature.
ƒR_θ is measured at T_J approximately 90°C
„Refer to AN-1086 for guidelines for measuring V_(BR)CES safely
2
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